Infineon IPB180N04S4-00: High-Performance OptiMOS 5 Power MOSFET for Automotive and Industrial Applications

The relentless push for higher efficiency, greater power density, and enhanced reliability in power electronics is met head-on by Infineon's latest generation of silicon-based power MOSFETs. The IPB180N04S4-00, a standout member of the OptiMOS™ 5 40 V family, exemplifies this progress, offering engineers a superior component tailored for the most demanding automotive and industrial environments.

Engineered for performance, this MOSFET is built upon Infineon's advanced trench technology. Its key defining feature is an exceptionally low typical on-state resistance (RDS(on)) of just 0.18 mΩ in a robust D2PAK (TO-263) package. This ultra-low resistance is a game-changer, as it directly translates to minimized conduction losses. In practical terms, this means significantly higher efficiency, reduced heat generation, and the potential for smaller heatsinks or even passive cooling in some applications, ultimately leading to more compact and cost-effective system designs.

Beyond raw efficiency, the IPB180N04S4-00 is designed for robustness. It boasts an outstanding reverse recovery charge (Qrr), which is crucial for mitigating switching losses and minimizing electromagnetic interference (EMI) in high-frequency switching circuits like DC-DC converters and motor drives. This makes it an ideal choice for switch-mode power supplies (SMPS), synchronous rectification, and motor control units where clean and fast switching is paramount.

The device's qualifications make it particularly suited for the automotive sector. It meets the stringent AEC-Q101 standard, ensuring its reliability and performance under the harsh conditions typical of automotive applications, such as under-the-hood modules, electric power steering (EPS), and braking systems. Furthermore, its high current handling capability (up to 1800 A pulse) provides a strong safety margin for handling high inrush currents.

For industrial applications, its advantages are equally compelling. The MOSFET's high efficiency and power density are critical for server power supplies, solar inverters, and industrial motor drives, where energy savings and operational reliability directly impact the total cost of ownership.

ICGOOODFIND: The Infineon IPB180N04S4-00 OptiMOS™ 5 MOSFET sets a new benchmark for power switching devices. Its combination of ultra-low RDS(on), superior switching characteristics, and automotive-grade robustness provides a critical advantage for designers striving to create more efficient, compact, and reliable power systems for the next generation of automotive and industrial products.

Keywords: OptiMOS™ 5, Low RDS(on), AEC-Q101, High Efficiency, Power Density.