Infineon IPD50N04S4L08ATMA1: A Deep Dive into the 40V, 50A OptiMOS 5 Power Transistor

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPD50N04S4L08ATMA1 stands out as a premier solution, encapsulating the advanced OptiMOS 5 technology to meet these demanding requirements. This 40V, 50A N-channel power MOSFET is engineered for a wide array of applications, from automotive systems to industrial motor drives and robust DC-DC converters.

Unpacking the OptiMOS 5 Advantage

The core of this component's performance lies in its fifth-generation OptiMOS platform. This technology represents a significant leap forward, primarily characterized by its exceptionally low figure-of-merit (R DS(on) Q G). The IPD50N04S4L08ATMA1 boasts an ultra-low maximum on-state resistance of just 1.8 mΩ at 10 V. This minimal R DS(on) is the primary contributor to reduced conduction losses, allowing the transistor to handle high continuous drain currents (I D) of up to 50A with remarkable efficiency. Lower resistance directly translates to less heat generation, enabling designers to create more compact systems with reduced cooling requirements.

Complementing its low conduction losses is its superior switching performance. The OptiMOS 5 technology ensures very low gate charge (Q G) and optimized internal capacitances. This results in faster switching speeds and significantly reduced switching losses, which is critical for high-frequency operation. The overall effect is a cooler-running, more efficient device that enables higher power density designs.

Key Features and Specifications

Voltage and Current Ratings: 40 V drain-source voltage (V DS) and 50 A continuous drain current (I D).

Ultra-Low On-Resistance: R DS(on) (max) of 1.8 mΩ at V GS = 10 V.

Optimized Switching Characteristics: Low total gate charge (Q G) and output capacitance (C oss).

Advanced Package: Housed in a SuperSO8 package (PG-TDSON-8), which offers a compact footprint and superior thermal performance compared to standard SO-8 packages. Its low package inductance further enhances its high-speed switching capability.

High Robustness: Features a high avalanche energy rating and is qualified according to the stringent AEC-Q101 standard for automotive applications, ensuring reliability under harsh operating conditions.

Application Overview

The combination of high current handling, low losses, and a robust package makes the IPD50N04S4L08ATMA1 exceptionally versatile.

1. Automotive Systems: It is an ideal candidate for load switch and motor control applications in vehicles, such as window lifters, seat controllers, and small pump drives. Its AEC-Q101 qualification guarantees performance and longevity in the challenging automotive environment.

2. Industrial Power Solutions: In factory automation, this MOSFET excels in DC-DC conversion stages for power supplies and in controlling brushless DC (BLDC) motors. Its efficiency helps reduce energy consumption and thermal management costs.

3. Server and Telecom Infrastructure: For point-of-load (POL) converters and OR-ing diodes in server motherboards and communication equipment, its low R DS(on) is critical for minimizing voltage drops and power loss, contributing to higher overall system efficiency.

ICGOOODFIND Summary

The Infineon IPD50N04S4L08ATMA1 is a high-performance power MOSFET that exemplifies the benefits of the OptiMOS 5 generation. Its standout features are its ultra-low 1.8 mΩ on-resistance, excellent switching efficiency, and automotive-grade robustness. It is a top-tier component for designers aiming to push the boundaries of power density and thermal management in modern electronic systems, from automotive to industrial and computing applications.

Keywords:

1. OptiMOS 5 Technology

2. Ultra-Low RDS(on)

3. Power Density

4. Automotive Grade (AEC-Q101)

5. SuperSO8 Package