Infineon IPD60R360P7S: 600V CoolMOS™ P7 Power Transistor for High-Efficiency Switching Applications

The Infineon IPD60R360P7S represents a significant advancement in power semiconductor technology, integrating the latest CoolMOS™ P7 superjunction MOSFET architecture. Designed specifically for high-efficiency and high-frequency switching applications, this 600V transistor sets a new benchmark in performance, reliability, and energy savings across various power conversion systems.

A key highlight of the IPD60R360P7S is its exceptionally low on-state resistance (RDS(on)) of just 360 mΩ, combined with minimal gate charge (Qg). This optimal ratio ensures reduced conduction and switching losses, making it ideal for applications such as switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting controls, and industrial motor drives. The reduced losses contribute directly to higher system efficiency and lower operational temperatures, enhancing both performance and device longevity.

Another standout feature is its integrated fast body diode, which improves reverse recovery characteristics. This allows for more robust hard-switching performance and reduces electromagnetic interference (EMI), simplifying circuit design and lowering the need for additional filtering components.

The CoolMOS™ P7 technology also incorporates advanced packaging in a TO-252 (DPAK) format, offering superior thermal performance and power density. This makes the device suitable for space-constrained designs without compromising on heat dissipation or reliability.

Furthermore, the transistor is designed with a strong focus on sustainability, supporting energy-efficient operations that comply with global standards such as ErP and ENERGY STAR. Its high switching capability allows for smaller passive components, contributing to more compact and cost-effective power solutions.

ICGOOODFIND:

The Infineon IPD60R360P7S stands out as a top-tier power MOSFET, delivering high efficiency, thermal robustness, and design flexibility for modern power electronics.

Keywords:

High-Efficiency, CoolMOS™ P7, Low RDS(on), Fast Switching, Integrated Diode