Infineon SPA20N60C3: A High-Performance 600V 20A N-Channel Power MOSFET

The Infineon SPA20N60C3 is a robust N-channel power MOSFET designed to meet the demanding requirements of high-efficiency power conversion systems. With a voltage rating of 600V and a continuous drain current capability of 20A, this MOSFET is engineered for applications such as switch-mode power supplies (SMPS), motor control, and industrial inverters where reliability and performance are critical.

Built on Infineon’s advanced Super Junction (CoolMOS™ C3) technology, the SPA20N60C3 delivers exceptional switching performance and low on-state resistance (RDS(on) as low as 0.19Ω). This results in reduced conduction and switching losses, contributing to higher system efficiency and lower heat generation. The device also features fast switching characteristics, making it suitable for high-frequency operations while maintaining stability under harsh conditions.

The MOSFET’s design emphasizes durability, with avalanche ruggedness and improved body diode robustness, ensuring reliable operation in environments with high voltage spikes or inductive loads. Its low gate charge (Qg) simplifies drive circuit design and allows for smoother turn-on and turn-off transitions.

Additionally, the SPA20N60C3 is housed in a TO-220 package, offering mechanical strength and efficient thermal management. This makes it easier to dissipate heat, further enhancing long-term reliability in continuous high-power applications.

ICGOOODFIND:

The Infineon SPA20N60C3 stands out for its high voltage handling, low losses, and ruggedness, making it an excellent choice for power electronics designers seeking efficiency and durability.

Keywords:

Power MOSFET, Super Junction Technology, High Efficiency, Low RDS(on), Avalanche Ruggedness