Infineon BSC16DN25NS3GATMA1: A High-Performance 25V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC16DN25NS3GATMA1 stands out as a premier solution, embodying the advanced engineering of Infineon’s OptiMOS™ power MOSFET technology. Designed for a broad spectrum of applications, from server power supplies and motor control to synchronous rectification in DC-DC converters, this 25V MOSFET sets a high benchmark in its class.

At the core of this device is its exceptional low on-state resistance (RDS(on)), which is as low as 1.6 mΩ. This ultra-low resistance is critical for minimizing conduction losses, allowing the MOSFET to handle high currents with remarkable efficiency. The result is reduced power dissipation, which directly translates into improved thermal performance and higher overall system efficiency. Such characteristics are indispensable in modern high-frequency switching power supplies, where every milliohm counts.

Another standout feature is its optimized gate charge (Qg). The low Qg ensures swift switching transitions, which is vital for high-frequency operation. This not only enhances efficiency by reducing switching losses but also allows for the use of smaller drivers and passive components, contributing to more compact and cost-effective designs. The combination of low RDS(on) and low Qg makes the BSC16DN25NS3GATMA1 an ideal choice for demanding applications that require both high current handling and fast switching capabilities.

The device is housed in an Infineon SuperSO8 package, which offers an excellent power-to-size ratio. This package is designed to maximize thermal conductivity, ensuring effective heat dissipation even under strenuous operating conditions. Its compact footprint is particularly beneficial in space-constrained applications, enabling designers to achieve higher power density without compromising performance.

Furthermore, the BSC16DN25NS3GATMA1 is characterized by its high robustness and reliability, adhering to Infineon’s stringent quality standards. It is well-suited for use in harsh environments, providing consistent performance and longevity. Whether deployed in automotive systems, industrial automation, or telecommunications infrastructure, this MOSFET delivers the durability needed for critical applications.

ICGOOODFIND: The Infineon BSC16DN25NS3GATMA1 exemplifies state-of-the-art power MOSFET design, offering an outstanding blend of ultra-low RDS(on), fast switching, and excellent thermal management. It is a top-tier component for engineers seeking to optimize efficiency and power density in next-generation electronic systems.

Keywords:

Power MOSFET

Low RDS(on)

OptiMOS Technology

High Efficiency

Thermal Performance